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global top 4 companies accounted for 96% of total FeRAM market(qyresearch, 2021)
Ferroelectric random access memory (FeRAM) is a nonvolatile memory, in which data are stored using hysteretic P-E (polarization vs. electric field) characteristics in a ferroelectric film. Ferroelectric random access memories (FeRAMs) are widely used in IC (integrated circuits) cards and RF (radio frequency) tags. Their features are (1) nonvolatile data storage (The stored data do not disappear even if electricity is turned off.), (2) the lowest power consumption among various semi-conductor memories, and (3) the operation speed as fast as that of DRAMs (dynamic RAMs). The global key manufacturers of FeRAM include ROHM (Lapis), Texas Instruments, etc. In 2021, the global top three players had a share approximately 96.0% in terms of revenue. For more information, please contact the following e-mail address: Email: global@qyresearch.com Website: https://www.qyresearch.com

Target State: All States Target City : All Cities Last Update : 20 May 2024 4:30 PM Number of Views: 7	Item Owner : Jessica Contact Email: (None) Contact Phone: (None)

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AUNetAds > Business Opportunities > Other Business Ads > Item ID 2184475

2024-05-20 (0.332 sec)